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INTEGRATED CIRCUITS
DATA SHEET
OQ2538HP SDH/SONET main amplifier
Preliminary specification File under Integrated Circuits, IC19 1997 Nov 26
Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
FEATURES * Differential 100 outputs for direct connection to Current-Mode Logic (CML) inputs * Wide bandwidth (3 GHz) * 48.5 dB limiting gain * Noise figure typically 11 dB * Automatic offset compensation * Input level-detection circuits for Automatic Gain Control (AGC) and Loss Of Signal (LOS) detection * Low power dissipation (typically 270 mW) * Single -4.5 V supply voltage * Low cost LQFP48 plastic package. APPLICATIONS * Main amplifier in Synchronous Digital Hierarchy (SDH) and Synchronous Optical Network (SONET) systems for short, medium and long haul optical transmission * Level detector for laser diode control loops * Wideband RF gain block with internal level detectors. ORDERING INFORMATION TYPE NUMBER OQ2538HP
GENERAL DESCRIPTION The OQ2538HP is a limiting amplifier IC intended for use as the main amplifier in 2.5 Gbits/s Non-Return to Zero (NRZ) transmission systems (SDH/SONET). Comprised of four amplifier stages with a total gain of 48.5 dB, it provides for a wide input signal dynamic range at a constant CML compatible output level. Two level-detection circuits are provided for monitoring AGC and LOS input signal levels. An internal automatic offset compensation circuit eliminates offset in the amplifier chain.
PACKAGE NAME LQFP48 DESCRIPTION plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm VERSION SOT313-2
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
BLOCK DIAGRAM
OQ2538HP
handbook, full pagewidth
IN INQ
8 6 AMP A AMP B AMP C AMP D
32 OUT 30 OUTQ
3 43 A
AGC AGCDC
BAND GAP
reference voltage for all cells 22 45 44
19 18 B
LOS LOSDC
21 REF
MGE745
CAPA
COFF COFFQ
GND
VEE
Fig.1 Block diagram.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
PINNING SYMBOL VEE n.c. AGC GND GND INQ GND IN GND GND n.c. VEE VEE n.c. n.c. GND GND LOSDC LOS GND REF CAPA n.c. VEE VEE n.c. n.c. GND GND OUTQ GND OUT GND GND n.c. VEE VEE n.c. GND n.c. 1997 Nov 26 PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 negative power supply not connected rectifier A output ground ground main amplifier inverting input ground main amplifier input ground ground not connected negative power supply negative power supply not connected not connected ground ground rectifier B reference output rectifier B output ground band gap reference pin for connecting band gap reference decoupling capacitor not connected negative power supply negative power supply not connected not connected ground ground main amplifier inverted output ground main amplifier output ground ground not connected negative power supply negative power supply not connected ground not connected 4 DESCRIPTION
OQ2538HP
TYPE(1) S - O S S I S I S S - S S - - S S O O S O A - S S - - S S O S O S S - S S - S -
Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
SYMBOL GND GND AGCDC COFFQ COFF n.c. n.c. VEE Note
PIN 41 42 43 44 45 46 47 48 ground ground rectifier A reference output
DESCRIPTION
TYPE(1) S S O A A - - S
pin for connecting automatic offset control capacitor (return) pin for connecting automatic offset control capacitor not connected not connected negative power supply
1. Pin type abbreviations: O = Output, I = Input, S = power Supply, A = Analog function.
45 COFF
handbook, full pagewidth
43 AGCDC
44 COFFQ
41 GND
39 GND
42 GND
48 VEE
VEE n.c. AGC GND GND INQ GND IN GND
37 VEE
46 n.c.
38 n.c.
40 n.c.
47 n.c.
1 2 3 4 5 6 7 8 9
36 VEE 35 n.c. 34 GND 33 GND 32 OUT
OQ2538HP
31 GND 30 OUTQ 29 GND 28 GND 27 n.c. 26 n.c. 25 VEE
GND 10 n.c. 11 VEE 12
LOSDC 18
CAPA 22
GND 16
GND 17
GND 20
VEE 24
LOS 19
REF 21
VEE 13
n.c. 14
n.c. 15
n.c. 23
MGE744
Fig.2 Pin configuration.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
FUNCTIONAL DESCRIPTION The OQ2538HP is comprised of four DC-coupled amplifier stages along with additional circuitry for offset compensation and level detection. The first amplifier stage contains a modified Cherry/Hooper amplifying cell with high gain (approximately 20 dB) and a wide bandwidth. Special attention is paid to minimizing the equivalent input noise at this stage, thus reducing the overall noise level. Additional feedback is applied at the second and third stages, improving isolation and reducing the gain to 14 dB per stage. The last stage is an output buffer, a unity gain amplifier, with an output impedance of 100 . The total gain of the OQ2538HP amounts to 48.5 dB, thus providing a constant CML-compatible output signal over a wide input signal range. Two rectifier circuits are used to measure the input signal level. Two separate RF pre-amplifiers are used to generate the voltage gain needed to obtain a suitable rectifier output voltage. For rectifier A the gain is approximately 18 dB, for rectifier B it is about 14 dB. The output of rectifier A can be used for AGC at the pre-amplifier stage in front of the OQ2538HP. The output of rectifier B can be used for LOS detection. There is a linear relationship between the rectifier output voltage and the input signal level provided the amplifiers are not saturated. Because the four gain stages are DC-coupled and provide a high overall gain, the effect of the input offset can be considerable. The OQ2538HP features an internal offset compensation circuit for eliminating the input offset. The bandwidth of the offset control loop is determined by an external capacitor. COFF and COFFQ offset compensation Automatic offset compensation eliminates the input offset of the OQ2538HP. This offset cancellation influences the low frequency gain of the amplifier stages. With a capacitance of 100 nF between COFF and COFFQ the loop bandwidth will be less than 1.5 kHz, small enough to have no influence on amplifier gain over the frequencies of interest. If the capacitor were omitted, the loop bandwidth would be greater than 30 MHz, which would influence the input signal gain. The loop bandwidth can be calculated from the following formula: 1 f loop = ----------------------------------------------(1) 2 x 1250 x C ext
100
OQ2538HP
where Cext is the capacitance connected between COFF and COFFQ. REF and CAPA band gap output and decoupling capacitance To reduce band gap noise levels, a 1 nF decoupling capacitor on CAPA is recommended. Since the band gap is referenced to the negative supply, VEE, the decoupling capacitor should be connected between CAPA and VEE. The band gap voltage is present for test purposes only. It is not intended to serve as an external reference. RF input and output connections Striplines, or microstrips, with an odd mode characteristic impedance of Zo,odd = 50 must be used for the differential RF connections on the PCB. This applies to both the input signal pair IN and INQ and to the output signal pair OUT and OUTQ. The two lines in each pair should be the same length. RF input matching circuit The input circuit for pins IN and INQ contains internal 100 resistors decoupled to ground via an internal common mode 6 pF capacitor. The topology is depicted in Fig.3. An external 200 resistor between IN and INQ is recommended in order to match the inputs to a differential transmission line, coupled microstrip or stripline with an odd mode impedance Zo,odd of 50 .
handbook, halfpage
GND 6 pF
100
IN
INQ
MGM114
Fig.3 RF input topology.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
In both cases, the essence of good matching is the equity of the circuitry on both input pins. The impedance seen on pins IN and INQ should be as equal as possible. For more information see "Application Note AN96051" describing the OM5801 STM16 demo board.
handbook, halfpage
22 nF IN
RF output matching circuit Matching of the main amplifier outputs, OUT and OUTQ, is not mandatory. In most applications, the receiving end of the transmission line will be properly matched, so very little reflection will occur. Matching the transmitting end to absorb these reflections is only recommended for very sensitive applications. In such cases, 100 pull-up resistors should be connected from OUT and OUTQ to ground, as close as possible to the IC pins. These matching resistors will not be needed in most applications, however. The output circuit of the OQ2538HP is depicted in Fig.6. For more information see "Application Note AN96051" describing the OM5801 STM16 demo board.
differential line Zo(odd) = 50
200 INQ 22 nF
MGM115
Fig.4 Differential input matching.
For single-ended excitation, separate matching networks on IN and INQ, as depicted in Fig.5, achieve optimum matching. Care should be taken to avoid DC loading, since the OQ2538HP controls its own DC input voltage. The resistors on the unused input, INQ, may be combined for convenience.
handbook, halfpage
GND 100 OUT 100 OUTQ
handbook, halfpage
22 nF
MGM117
100 transmission line Zo = 50 INQ 50 22 nF 100 22 nF
MGM116
22 nF IN
Fig.6 RF output topology.
RF gain and group delay measurements The measurement set-up shown in Fig.7 was used to measure the single-ended small signal gain as specified in Chapter "Characteristics". Since the network analyzer can only perform single-ended measurements, the single-ended matching scheme described above is used to match the inputs of the OQ2538HP to 50 . For greater accuracy, the outputs are also matched. The gain measured with this set-up is denoted by S21. Graphs of typical S21 and group delay characteristics are shown in Figs 8 and 9. The OQ2538HP test PCB used for these measurements can be supplied on request.
Fig.5 single-ended input matching.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
handbook, full pagewidth
6 GHz NETWORK ANALYZER
S-PARAMETER TEST SET P = -50 dBm PORT 1 PORT 2 Zo = 50 50 semi rigid 100 pF IN 50 semi rigid 50 SMA termination 100 pF INQ 100 100 VEE = -4.5 V OUTQ 100 100 50 SMA termination
MGM111
OQ2538HP test PCB OUT
Zo = 50 50 semi rigid
50 semi rigid
Fig.7 S21 and group delay measurement set-up.
Although the differential voltage gain of the OQ2538HP cannot be measured directly, it can be calculated from S21. The differential voltage gain is 6 dB greater than the measured S21 value, typically 46 dB (40 dB + 6 dB). If the 100 matching resistors on the output are omitted, the differential voltage gain is increased by a further 2.4 dB, typically to 48.4 dB. This is due to the fact that the output load is increased from 25 to 33 , so the output voltage is increased by a factor of 1.32 (2.4 dB).
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
S21
handbook, full pagewidth
log MAG
MGM160
(2)
40 dB
(1)
(3)
(4)
start: 30 kHz
stop: 6 GHz
Vertical scale 6 dB/division. Linear frequency sweep: start: 30 kHz; stop: 6 GHz. (1) 41.603 dB; 1 GHz. (2) 38.633 dB; 3.45 GHz. (3) 41.291 dB; 2 GHz. (4) 41.386 dB; 2.5 GHz.
Fig.8 S21 characteristic, measured on the OQ2538HP test PCB.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
S21
handbook, full pagewidth
delay
MGM161
(2)
(1)
(3)
(4)
0 ps
start: 30 kHz
stop: 6 GHz
Vertical scale 200 ps/division. Linear frequency sweep: start: 30 kHz; stop: 6 GHz. (1) 832.91 ps; 1 GHz. (2) 1007.4 ps; 3.45 GHz. (3) 834 ps; 2 GHz. (4) 860.93 ps; 2.5 GHz.
Fig.9 Group delay characteristic, measured on the OQ2538HP test PCB.
Noise figure measurements The noise figure is the ratio of signal-to-noise ratio at the input (Si/Ni) to signal-to-noise ratio at the output (So/No) of the amplifier. This definition is true for both single-ended and differential amplifiers, provided the correct values for Si/Ni and So/No are substituted in the formula. The noise figure is measured using the differential set-up shown in Fig.10. The total noise on the output (No in dBm) is measured using the spectrum analyzer at the frequency of interest. From this value, the actual (differential) noise figure for that frequency (spot noise figure) can be calculated using the following formula:
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
No No Si Ni F = ----------------- = -------------------------- = --------------------------- The factor 2 in 2 S 21 N i 2 S 21 kT So No the denominator is present to compensate for the fact that S21 is the single-ended power gain, whereas the differential power gain is applicable in this situation. Ni can be replaced with the available noise power at the input, which is kT under matched conditions (k is Boltzmann's constant). The formula expressed in dBm makes calculation easier: F = N o - ( S 21 + 3 ) + 173.8 [ dB ] ,
OQ2538HP
assuming log(kT) is -173.8 dBm (T = 298k) and No measured in 1 Hz bandwidth and expressed in dBm. For the OQ2538HP, in the differential configuration (including the 100 matching resistors), this yields a typical noise figure of 11 dB. While the performance of this measurement set-up cannot match that of a dedicated noise analysis system, the results are comparable for an amplifier with a noise figure of 11 dB.
handbook, full pagewidth
SPECTRUM ANALYZER
IN
Zo = 50 OQ2538HP test PCB 50 semi rigid 50 SMA termination 50 SMA termination 100 pF IN 50 semi rigid 100 pF INQ 100 100 VEE = -4.5 V OUTQ 100 100 50 SMA termination
MGM112
50 semi rigid OUT 50 semi rigid
Fig.10 Noise figure measurement set-up.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
MGE746
MGE747
VAGC - VAGCDC (mV) 200 max expected
(2) (1)
VLOS - VLOSDC (mV) 200 max expected
(2) (1) (3)
100
100
(3)
min expected 0 0 0 10 20 30 40 60 VIN (mV p-p) 50 80
min expected
0
1
2
3
4
5
6
7 8 9 10 11 VIN (mV p-p)
(1) Tamb = -20 C. (2) Tamb = +25 C. (3) Tamb = +85 C.
(1) Tamb = -20 C. (2) Tamb = +25 C. (3) Tamb = +85 C.
Fig.11 AGC transfer characteristics.
Fig.12 LOS detection characteristics.
AGC and AGCDC level detection When using rectifier A as an input signal level detector, the AGC and the AGCDC pins must be decoupled to ground with 100 nF capacitors. The AGCDC output is intended as a reference voltage against which the actual AGC output voltage can be compared. This voltage difference, VAGC - VAGCDC, can be used as a control input in an AGC loop. A graph depicting output voltage difference as a function of the input signal level (typical) is shown in Fig.11. Note that an input signal with the specified peak-to-peak value is applied to both IN and INQ inputs, but with complementary phase. LOS and LOSDC level detection The output of rectifier B can be used for LOS detection. The LOSDC output provides a reference voltage against which the voltage at the LOS output can be compared. The voltage difference VLOS - VLOSDC can be used as input to a LOS detection circuit. Both outputs need to be decoupled using 100 nF capacitors. A graph depicting
VLOS - VLOSDC as a function of the input signal level (typical) is shown in Fig.12. Note that an input signal with the specified peak-to-peak value is applied to both IN and INQ inputs, but with complementary phase. Grounding and power supply decoupling The ground connection on the PCB needs to be a large copper area fill connected to a common ground plane with as low inductance as possible, preferably positioned directly underneath the LQFP48 package. The large area fill will improve heat transfer to the PCB and thus aid IC cooling. All VEE pins (two at each corner) need to be connected to a common supply plane with as low inductance as possible. This plane should be decoupled to ground. To avoid high frequency resonance, multiple bypass capacitors should not be mounted at the same location. To minimise low frequency switching noise in the vicinity of the OQ2538HP, the power supply line should be filtered once using an LC-circuit with a low cut-off frequency (see Fig.14).
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
Using alternative supply voltages Although the OQ2538HP is intended to be used with a single -4.5 V supply voltage, a slightly modified -5 V supply can also be used. By connecting a Schottky diode between the VEE power supply line and the IC, an additional 0.5 V voltage drop is obtained, bringing the supply voltage on the pins of the OQ2538HP within the specified range. A BAS85 Schottky diode is recommended. A -5 V application schematic is shown in Fig.15. Extrapolating from this case, a +5 V application is also possible. However, care should be taken with the RF transmission lines. The on-chip signals refer to the GND pins, which become the positive supply pins in a +5 V application. The external transmission lines will most likely be referenced to system ground (VEE pins). The RF signals
OQ2538HP
will change from one reference plane to another at the interface to the RF input and output pins. The positive supply application is very vulnerable to interference at this point. For a successful +5 V application, special care should be taken when designing board layout to reduce the influence of interference and keep the positive supply as clean as possible. ESD protection Exceptions have been made to the standard ESD protection scheme in order to achieve high frequency performance. The inputs IN and INQ and the outputs OUT and OUTQ have no protection against ESD. All other pins have a standard ESD protection structure, capable of withstanding 2 kV Human Body Model (HBM) zappings.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VEE VI II, IIQ In PARAMETER supply voltage input voltage difference input current DC current pins 30 and 32 pins 3, 18, 19 and 43 pin 21 pins 44 and 45 pin 22 Ptot Tj Tstg Note 1. VI = VIN - VINQ (AC only). The DC level is internally controlled. THERMAL CHARACTERISTICS SYMBOL Rth(j-s) DESCRIPTION thermal resistance from junction to solder point VALUE 48 UNIT K/W total power dissipation junction temperature storage temperature -6 -3 -2 -1 -0.1 - - -65 +10 +3 +2 +1 +0.1 380 150 +150 mA mA mA mA mA mW C C note 1 CONDITIONS MIN. -6.0 -600 -2.0 MAX. +0.5 +600 +2.0 V mV mA UNIT
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
CHARACTERISTICS At nominal supply voltages; Tamb = -40 to +85 C; 50 measuring environment. SYMBOL VEE IEE Ptot Tamb Tj Vi(p-p) VI VIO Zi S21 Gv(dif) No F B-3dB VO(ref) Vi(p-p) V VOO VO(ref) Vi(p-p) V VOO VO R PARAMETER negative supply voltage negative supply current total power dissipation operating ambient temperature operating junction temperature note 1 note 2 CONDITIONS - - -40 -40 MIN. -4.725 TYP. -4.5 60 270 - - - -2.1 0.2 100 40 48.5 -120 11 3.0 -3.0 - 350 - -3.1 - 400 - -2.1 1250
OQ2538HP
MAX. -4.275 80 380 +85 +120 V
UNIT mA mW C C
Main amplifier inputs: IN and INQ; note 3 signal voltage swing (peak-to-peak) DC input voltage input offset voltage single-ended input impedance single-ended small signal gain differential voltage gain output noise power noise figure 3 dB bandwidth DC reference voltage rectifier linear range for input signals IN and INQ (peak-to-peak value) maximum input signal level related voltage difference output offset voltage open output note 12 note 13 note 14 note 4 note 5 note 6 note 7 note 8 note 9 note 10 note 10 2 -2.4 - - 34 - - - 2.4 -3.3 12.5 - -5 -3.4 2.5 - -15 -2.4 - 600 -1.7 - - - - - - - -2.5 60 - +5 -2.6 9 - +15 -1.7 - mV V mV dB dB dBm dB GHz V mV mV mV
Rectifier outputs: AGC and AGCDC; note 11
Rectifier outputs: LOS and LOSDC; note 11 DC reference voltage rectifier linear range for input signals IN and INQ (peak-to-peak value) maximum input signal level related voltage difference output offset voltage open output note 12 note 13 note 14 V mV mV mV
Automatic offset compensation lowpass filter: COFF and COFFQ DC output voltage offset compensation filter resistance open output V
Band gap reference: REF VO band gap voltage referenced to VEE; open output; note 15 1.1 1.3 1.5 V
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Preliminary specification
SDH/SONET main amplifier
OQ2538HP
SYMBOL
PARAMETER
CONDITIONS -
MIN.
TYP. -
MAX.
UNIT
Band gap reference decoupling: CAPA VO decoupling voltage referenced to VEE; open output 2.9 V
Main amplifier outputs: OUT and OUTQ; note 16 VOH VOL tr tf Zo Notes 1. No special cooling is required in the application if the total thermal resistance Rth(j-a) is less than 90 K/W. 2. The temperature of the PCB in the vicinity of the IC is taken to be the ambient temperature. 3. The input signal must be AC coupled to the inputs through a coupling capacitance >22 nF. 4. Vi(p-p) is the input signal on IN and INQ for full output clipping. It is assumed that both inputs carry a complementary signal of the specified peak-to-peak value. The lower specified limit is usually called the input sensitivity. This value is defined as a 20% increase in rise and fall times when compared to rise and fall times with a complementary input signal of 10 mV (p-p) applied to IN and INQ. 5. The DC voltage is fixed internally; only AC-coupling of the input signal is allowed. 6. VIO = V I - V IQ 7. See Section "RF input matching circuit" for detailed information. 8. All signal ports are AC matched to 50 and are measured at 1 GHz (see Fig.7). Flatness deviations are within 3 dB over the entire bandwidth. 9. See section "RF gain and group delay measurements". 10. F is the noise figure for a differential application and is measured at 1 GHz. See Section "Noise figure measurements". 11. An external 100 nF capacitor is connected at each output to remove any spurious high frequency signals. Any circuitry driven from these pins must have an input impedance >50 k. 12. The specified values are for indication only. The range is not production tested and guaranteed. 13. Voltage difference between AGC (LOS) and AGCDC (LOSDC), measured with a differential input signal of 600 mV (p-p) to pins IN and INQ. 14. The offset is measured with inputs IN and INQ shorted together. 15. The band gap voltage may not be used as an external reference. 16. Both outputs are connected to ground through a 50 load resistance and carry complementary signals. 17. The output levels are dependent on load impedance. The specified values assume an external load impedance of 50 . If the external 100 matching resistors are connected at pins OUT and OUTQ, the output levels will fall to 75% of the specified values. (see also Section "RF gain and group delay measurements"). HIGH-level output voltage LOW-level output voltage differential output rise time differential output fall time single-ended output impedance note 17 -20 -280 input signal >2 mV (p-p) - input signal >2 mV (p-p) - see Fig.6 83 -5 -200 100 100 100 0 -140 150 150 117 mV mV ps ps
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Preliminary specification
SDH/SONET main amplifier
APPLICATION INFORMATION
OQ2538HP
handbook, full pagewidth
CGY2100
RFB
OQ2538HP
OQ2541HP
data
IPHOTO
FILTER
to data and clock recovery unit recovered clock
Vbias
TRANSIMPEDANCE AMPLIFIER
LIMITING AMPLIFIER
DATA AND CLOCK RECOVERY
MGE748
PHOTODIODE
Fig.13 System application diagram.
andbook, full pagewidth
CIN IN >22 nF CINQ INQ >22 nF 200
IN
8
32 30
OUT OUTQ
INQ
16
45
COFF 100 nF
OQ2538HP
AGC 44 3 43 21 22 19 18 LOS LOSDC VEE GND 10 H 100 nF 100 nF 33 nF 4.7 F COFFQ REF CAPA
GAIN REGULATION 100 nF
AGCDC 100 nF
1 nF VEE -4.5 V
LOSS OF SIGNAL DETECTION
MGE749
Fig.14 Typical application schematic.
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Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
OQ2538HP
handbook, full pagewidth
CIN IN >22 nF CINQ INQ >22 nF 200
IN
8
32 30
OUT OUTQ
INQ
16
45
COFF 100 nF
OQ2538HP
AGC 44 3 43 21 22 19 18 LOS LOSDC VEE GND 10 H 100 nF 100 nF 33 nF COFFQ REF CAPA
GAIN REGULATION 100 nF
AGCDC 100 nF
1 nF VEE BAS85 -5.0 V 4.7 F
MGM113
LOSS OF SIGNAL DETECTION
Fig.15 -5 V application schematic.
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Preliminary specification
SDH/SONET main amplifier
PACKAGE OUTLINE LQFP48: plastic low profile quad flat package; 48 leads; body 7 x 7 x 1.4 mm
OQ2538HP
SOT313-2
c
y X
36 37
25 24 ZE
A
e
E HE
A A2
A1
(A 3) Lp L detail X
wM pin 1 index 48 1 12 ZD bp D HD wM B vM B vM A 13 bp
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm Note 1. Plastic or metal protrusions of 0.25 mm maximum per side are not included. OUTLINE VERSION SOT313-2 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION A max. 1.60 A1 0.20 0.05 A2 1.45 1.35 A3 0.25 bp 0.27 0.17 c 0.18 0.12 D (1) 7.1 6.9 E (1) 7.1 6.9 e 0.5 HD 9.15 8.85 HE 9.15 8.85 L 1.0 Lp 0.75 0.45 v 0.2 w 0.12 y 0.1 Z D (1) Z E (1) 0.95 0.55 0.95 0.55 7 0o
o
ISSUE DATE 94-12-19 97-08-01
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Preliminary specification
SDH/SONET main amplifier
SOLDERING Introduction There is no soldering method that is ideal for all IC packages. Wave soldering is often preferred when through-hole and surface mounted components are mixed on one printed-circuit board. However, wave soldering is not always suitable for surface mounted ICs, or for printed-circuits with high population densities. In these situations reflow soldering is often used. This text gives a very brief insight to a complex technology. A more in-depth account of soldering ICs can be found in our "IC Package Databook" (order code 9398 652 90011). Reflow soldering Reflow soldering techniques are suitable for all LQFP packages. Reflow soldering requires solder paste (a suspension of fine solder particles, flux and binding agent) to be applied to the printed-circuit board by screen printing, stencilling or pressure-syringe dispensing before package placement. Several techniques exist for reflowing; for example, thermal conduction by heated belt. Dwell times vary between 50 and 300 seconds depending on heating method. Typical reflow temperatures range from 215 to 250 C. Preheating is necessary to dry the paste and evaporate the binding agent. Preheating duration: 45 minutes at 45 C. Wave soldering Wave soldering is not recommended for LQFP packages. This is because of the likelihood of solder bridging due to closely-spaced leads and the possibility of incomplete solder penetration in multi-lead devices.
OQ2538HP
If wave soldering cannot be avoided, the following conditions must be observed: * A double-wave (a turbulent wave with high upward pressure followed by a smooth laminar wave) soldering technique should be used. * The footprint must be at an angle of 45 to the board direction and must incorporate solder thieves downstream and at the side corners. Even with these conditions, do not consider wave soldering LQFP packages LQFP48 (SOT313-2), LQFP64 (SOT314-2) or LQFP80 (SOT315-1). During placement and before soldering, the package must be fixed with a droplet of adhesive. The adhesive can be applied by screen printing, pin transfer or syringe dispensing. The package can be soldered after the adhesive is cured. Maximum permissible solder temperature is 260 C, and maximum duration of package immersion in solder is 10 seconds, if cooled to less than 150 C within 6 seconds. Typical dwell time is 4 seconds at 250 C. A mildly-activated flux will eliminate the need for removal of corrosive residues in most applications. Repairing soldered joints Fix the component by first soldering two diagonallyopposite end leads. Use only a low voltage soldering iron (less than 24 V) applied to the flat part of the lead. Contact time must be limited to 10 seconds at up to 300 C. When using a dedicated tool, all other leads can be soldered in one operation within 2 to 5 seconds between 270 and 320 C.
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Preliminary specification
SDH/SONET main amplifier
DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values
OQ2538HP
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
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Preliminary specification
SDH/SONET main amplifier
NOTES
OQ2538HP
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Preliminary specification
SDH/SONET main amplifier
NOTES
OQ2538HP
1997 Nov 26
22
Philips Semiconductors
Preliminary specification
SDH/SONET main amplifier
NOTES
OQ2538HP
1997 Nov 26
23
Philips Semiconductors - a worldwide company
Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010, Fax. +43 160 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor, 51 James Bourchier Blvd., 1407 SOFIA, Tel. +359 2 689 211, Fax. +359 2 689 102 Canada: PHILIPS SEMICONDUCTORS/COMPONENTS, Tel. +1 800 234 7381 China/Hong Kong: 501 Hong Kong Industrial Technology Centre, 72 Tat Chee Avenue, Kowloon Tong, HONG KONG, Tel. +852 2319 7888, Fax. +852 2319 7700 Colombia: see South America Czech Republic: see Austria Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S, Tel. +45 32 88 2636, Fax. +45 31 57 0044 Finland: Sinikalliontie 3, FIN-02630 ESPOO, Tel. +358 9 615800, Fax. +358 9 61580920 France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex, Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427 Germany: Hammerbrookstrae 69, D-20097 HAMBURG, Tel. +49 40 23 53 60, Fax. +49 40 23 536 300 Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS, Tel. +30 1 4894 339/239, Fax. +30 1 4814 240 Hungary: see Austria India: Philips INDIA Ltd, Band Box Building, 2nd floor, 254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025, Tel. +91 22 493 8541, Fax. +91 22 493 0966 Indonesia: see Singapore Ireland: Newstead, Clonskeagh, DUBLIN 14, Tel. +353 1 7640 000, Fax. +353 1 7640 200 Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053, TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007 Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3, 20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557 Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku, TOKYO 108, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077 Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL, Tel. +82 2 709 1412, Fax. +82 2 709 1415 Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR, Tel. +60 3 750 5214, Fax. +60 3 757 4880 Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905, Tel. +9-5 800 234 7381 Middle East: see Italy Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB, Tel. +31 40 27 82785, Fax. +31 40 27 88399 New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. Vicente Pinzon, 173, 6th floor, 04547-130 SAO PAULO, SP, Brazil, Tel. +55 11 821 2333, Fax. +55 11 821 2382 Spain: Balmes 22, 08007 BARCELONA, Tel. +34 3 301 6312, Fax. +34 3 301 4107 Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM, Tel. +46 8 632 2000, Fax. +46 8 632 2745 Switzerland: Allmendstrasse 140, CH-8027 ZURICH, Tel. +41 1 488 2686, Fax. +41 1 481 7730 Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1, TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874 Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd., 209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260, Tel. +66 2 745 4090, Fax. +66 2 398 0793 Turkey: Talatpasa Cad. No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1997
Internet: http://www.semiconductors.philips.com
SCA56
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
427027/200/01/pp24
Date of release: 1997 Nov 26
Document order number:
9397 750 03125

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